Thin Film Charged Particle Trackers

Silicon tracking detectors have grown to cover larger surface areas up to hundreds of square meters, and are even taking over other sub-detectors, such as calorimeters. However, further improvements in tracking detector performance are more likely to arise from the ability to make a low mass detector comprised of a high ratio of active sensor to dead materials, where dead materials include electrical services, cooling, mechanical supports, etc. In addition, the cost and time to build these detectors is currently large. Therefore, advancements in the fundamental technology of tracking detectors may need to look at a more transformative approach that enables extremely large area coverage with minimal dead material and is easier and faster to build. The advancement of thin film fabrication techniques has the potential to revolutionize the next-to-next generation of particle detector experiments. Some thin film deposition techniques have already been developed and widely used in the industry to make LED screens for TV's and monitors. If large area thin film detectors on the order of several square meters can be fabricated with similar performance as current silicon technologies, they could be used in future particle physics experiments. This paper aims to review the key fundamental performance criteria of existing silicon detectors and past research to use thin films and other semi-conductor materials as particle detectors in order to explore the important considerations and challenges to pursue thin film detectors.Comment: 32 pages, 15 figure

Perspectives of 2D MXene Tribology

The Large and Rapidly Growing Family of 2D Early Transition Metal Carbides, Nitrides, and Carbonitrides (MXenes) Raises Significant Interest in the Materials Science and Chemistry of Materials Communities. Discovered a Little More Than a Decade Ago, MXenes Have Already Demonstrated Outstanding Potential in Various Applications Ranging from Energy Storage to Biology and Medicine. the Past Two Years Have Witnessed Increased Experimental and Theoretical Efforts toward Studying MXenes\u27 Mechanical and Tribological Properties When Used as Lubricant Additives, Reinforcement Phases in Composites, or Solid Lubricant Coatings. Although Research on the Understanding of the Friction and Wear Performance of MXenes under Dry and Lubricated Conditions is Still in its Early Stages, It Has Experienced Rapid Growth Due to the Excellent Mechanical Properties and Chemical Reactivities Offered by MXenes that Make Them Adaptable to Being Combined with Other Materials, Thus Boosting their Tribological Performance. in This Perspective, the Most Promising Results in the Area of MXene Tribology Are Summarized, Future Important Problems to Be Pursued Further Are Outlined, and Methodological Recommendations that Could Be Useful for Experts as Well as Newcomers to MXenes Research, in Particular, to the Emerging Area of MXene Tribology, Are Provided

Small Amplitude Reciprocating Wear Performance of Diamond-like Carbon Films: Dependence of Film Composition and Counterface Material

Small amplitude (50 μm) reciprocating wear of hydrogen-containing diamond-like carbon (DLC) films of different compositions has been examined against silicon nitride and polymethyl-methacrylate (PMMA) counter-surfaces, and compared with the performance of an uncoated steel substrate. Three films were studied: a DLC film of conventional composition, a fluorine-containing DLC film (F-DLC), and silicon-containing DLC film. The films were deposited on steel substrates from plasmas of organic precursor gases using the Plasma Immersion Ion Implantation and Deposition (PIIID) process, which allows for the non-line-of-sight deposition of films with tailored compositions. The amplitude of the resistive frictional force during the reciprocating wear experiments was monitored in situ, and the magnitude of film damage due to wear was evaluated using optical microscopy, optical profilometry, and atomic force microscopy. Wear debris was analyzed using scanning electron microscopy and energy dispersive spectroscopy. In terms of friction, the DLC and silicon-containing DLC films performed exceptionally well, showing friction coefficients less than 0.1 for both PMMA and silicon nitride counter-surfaces. DLC and silicon-containing DLC films also showed significant reductions in transfer of PMMA compared with the uncoated steel. The softer F-DLC film performed similarly well against PMMA, but against silicon nitride, friction displayed nearly periodic variations indicative of cyclic adhesion and release of worn film material during the wear process. The results demonstrate that the PIIID films achieve the well-known advantageous performance of other DLC films, and furthermore that the film performance can be significantly affected by the addition of dopants. In addition to the well-established reduction of friction and wear that DLC films generally provide, we show here that another property, low adhesiveness with PMMA, is another significant benefit in the use of DLC films

PMMA-Assisted Plasma Patterning of Graphene

Microelectronic fabrication of Si typically involves high-temperature or high-energy processes. For instance, wafer fabrication, transistor fabrication, and silicidation are all above 500°C. Contrary to that tradition, we believe low-energy processes constitute a better alternative to enable the industrial application of single-molecule devices based on 2D materials. The present work addresses the postsynthesis processing of graphene at unconventional low temperature, low energy, and low pressure in the poly methyl-methacrylate- (PMMA-) assisted transfer of graphene to oxide wafer, in the electron-beam lithography with PMMA, and in the plasma patterning of graphene with a PMMA ribbon mask. During the exposure to the oxygen plasma, unprotected areas of graphene are converted to graphene oxide. The exposure time required to produce the ribbon patterns on graphene is 2 minutes. We produce graphene ribbon patterns with ∼50 nm width and integrate them into solid state and liquid gated transistor devices.)e submitted manuscript has been created by UChicago Argonne, LLC, Operator of Argonne National Laboratory (“Argonne”). Argonne, a U.S. Department of Energy Office of Science laboratory, is operated under Contract DE-AC02-06CH11357. )e U.S. Government retains for itself, and others acting on its behalf, a paid-up nonexclusive, irrevocable worldwide license in said article to reproduce, prepare derivative works, distribute copies to the public, and perform publicly and display publicly, by or on behalf of the government. Funding text #2 )e Center for Nanoscale Materials was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract DE-AC02-06CH11357. )e authors also acknowledge financial support from Argonne National Laboratory’s Laboratory-Directed Research and Development Strategic Initiative.Revisión por pare

MEMS/NEMS based on mono-, nano-, and ultrananocrystalline diamond films

Diamond, because of its unique physical, chemical, and electrical properties and the feasibility of growing it in thin-fi lm form, is an ideal choice as a material for the fabrication of reliable, long endurance, microelectromechanical/nanoelectromechanical systems (MEMS/NEMS). However, various practical challenges, including wafer-scale thickness uniformity, CMOS compatibility, surface micromachining, and, more importantly, controlling the internal stress of the diamond fi lms, make this material more challenging for MEMS engineers. Recent advances in the growth of diamond fi lms using chemical vapor deposition have changed this landscape since most technical hurdles have been overcome, enabling a new era of diamond based MEMS and NEMS development. This article discusses a few examples of MEMS and NEMS devices that have been fabricated using mono-, nano-, and ultrananocrystalline diamond films as well as their performance

Method to Fabricate Portable Electron Source based on Nitrogen Incorporated Ultrananocrystalline Diamond (N-UNCD)

A source cold cathode field emission array (FEA) source based on ultra-nanocrystalline diamond (UNCD) field emitters. This system was constructed as an alternative for detection of obscured objects and material. Depending on the geometry of the given situation a flat-panel source can be used in tomography, radiography, or tomosynthesis. Furthermore, the unit can be used as a portable electron or X-ray scanner or an integral part of an existing detection system. UNCD field emitters show great field emission output and can be deposited over large areas as the case with carbon nanotube “forest” (CNT) cathodes. Furthermore, UNCDs have better mechanical and thermal properties as compared to CNT tips which further extend the lifetime of UNCD based FEA